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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 8.0V ≤ V PWR = V BAT ≤ 40V, -40 ° C ≤ T A ≤ 125 ° C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER (CONTINUED)
Output Rise Time to 90% (43)
t IS_RISE
μs
RL = 1k ? , C L = 500 pF
–
–
1.0
0.3 < V O < 4.8V
Gain = 5 to 15
Output Fall Time to 10% (43)
t IS_FALL
μs
RL = 1k ?
–
–
1.0
C L = 500pF
0.3 < V O < 4.8V
Gain = 5 to 15
Slew Rate at Gain = 5.0 (42)
SR (5)
5.0
–
–
V/μs
RL = 1 κ? , C L = 20pF
Phase Margin at Gain = 5.0 (42)
f M
–
30
–
°
Unity Gain Bandwidth
(42)
G BW
–
20
–
MHz
RL = 1 κ? , C L = 100pF
Bandwidth at Gain = 15 (42)
BW G
2.0
–
–
MHz
R L = 1 κ? , C L = 50pF
Common Mode Rejection (CMR) (42) with V IN
V IN_CM = 400mV*sin(2* π *freq*t)
V IN _ DIF = 0.0V, RS = 1k ?
R FB = 15 k ? , V REFIN = 0.0V
CMR = 20*Log(V OUT /V IN _ CM )
CMR
dB
Freq = 100kHz
Freq = 1.0MHz
Freq = 10MHz
50
40
30
–
–
–
–
–
–
SUPERVISORY AND CONTROL CIRCUITS
EN1 and EN2 Propagation Delay
INT Rise Time CL = 100 pF
INT Fall Time CL = 100 pF
INT Propagation Time
t PROP
t RINT
t FINT
t PROPINT
–
10
10
–
–
–
–
–
280
250
200
250
ns
ns
ns
ns
Notes
42. This parameter is guaranteed by design, not production tested.
43. Rise and fall times are measured from the transition of a step function on the input to 90% of the change in output voltage.
33927
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
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